MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent the residing of an interlayer dielectric material between grooves by removing a tungsten hard mask and an interlayer dielectric formed in the groove. A bit line made of a conductive layer and a tungsten hard mask(208) is formed on a semiconductor device. A nitride spacer(210) is formed on both sidewalls of the bit line. An interlayer dielectric(212) is formed on the semiconductor device to cover the bit line. First and second CMP(Chemical Mechanical Polishing) processes are performed on the interlayer dielectric until the tungsten hard mask is exposed. The first CMP process is performed until the tungsten hard mask is exposed by using CeO2-based slurry. The second CMP process is performed by using the CeO2-based slurry to which an oxidizing agent is added, thereby completely removing a residual interlayer dielectric between surface grooves of the tungsten hard mask due to the increase of a polishing speed with respect to tungsten.