| 摘要 |
<p>An exposure mask is provided to improve an exposure process margin by obtaining higher optical transmissivity in the same mask condition. An exposure pattern(220) is positioned on a transparent substrate(210). The exposure pattern is buried by a passivation layer(230) positioned on the transparent substrate. The passivation layer can be made of one selected from a group of quartz, fluoride polymer, a SiON material and a composition thereof. A semiconductor device can be fabricated by using an exposure mask(200) including the transparent substrate, the exposure pattern and the passivation layer.</p> |
