发明名称 |
Thin film semiconductor device, method for fabricating the same and semiconductor device |
摘要 |
A thin film semiconductor device includes: a substrate having an insulating surface; a semiconductor layer containing silicon and germanium formed on the substrate; a gate insulating film formed on the semiconductor layer; and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a thermal oxide film formed by thermally oxidizing a surface of the semiconductor layer.
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申请公布号 |
US6228692(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19990359207 |
申请日期 |
1999.07.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TSUTSU HIROSHI |
分类号 |
H01L29/78;H01L21/28;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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