IMAGE SENSOR AND METHOD FOR FABRICATION OF THE SAME

摘要

An image sensor and a manufacturing method thereof are provided to simplify a manufacturing process and to reduce a manufacturing cost by removing an additional micro-lens. A circuit region is formed on a semiconductor substrate(10). An interlayer dielectric(30) includes a metal line(35) which is formed on the semiconductor substrate. A lower electrode(45) is formed on the metal line. A light receiving unit(100) is formed on the lower electrode and the interlayer dielectric. An upper electrode is formed on the light receiving unit. A color filter array(90) is formed on the upper electrode. The metal line is protruded from an upper part of the interlayer dielectric to form a convex part.