METHOD FOR FORMING SIC SINGLE CRYSTAL

摘要

A method of growing SiC single crystal is provided to improve a quality of the SiC crystal and lower carrier density and micropipe density by periodically introducing hydrogen to a growth furnace. A seed(20) with an SiC epitaxial layer formed on a surface is prepared. After the seed and a source are loaded in a furnace(10), the furnace is mounted in a growth furnace(50). The growth furnace is maintained in a vacuum, and then SiC single crystal is grown by repeatedly introducing and stopping a gas containing hydrogen. The growth furnace is cooled. The SiC epitaxial layer is formed under pressure of 30 to 70 mbar at a temperature of 200 °C.