发明名称 STORAGE ELEMENT AND MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a storage element which has superior thermal stability and reduces writing current. SOLUTION: The storage element 3 has a storage layer 17 for keeping information by the magnetization state of a magnetic material; a magnetization fixing layer 31 is provided with respect to the storage layer 17 via an intermediate layer made of an insulator; the orientation of magnetization M1 of the storage layer 17 is changed by impregnating electrons which are spin-polarized in the laminating direction, to have the information recorded in the layer 17; and the specific resistance of a ferromagnetic layer, constituting the storage layer 17, is 8×10<SP>-7</SP>Ωm or higher. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008160031(A) 申请公布日期 2008.07.10
申请号 JP20060350113 申请日期 2006.12.26
申请人 SONY CORP 发明人 HOSOMI MASAKATSU;OMORI HIROYUKI;IGARASHI MINORU;YAMAMOTO TETSUYA;HIGO YUTAKA;YAMANE ICHIYO;OISHI TAKENORI;KANO HIROSHI
分类号 H01L21/8246;H01L27/105;H01L43/08 主分类号 H01L21/8246
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