| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light emitting element that is applicable to the formation of a MQW structure using a ZnO-based semiconductor. <P>SOLUTION: A method of manufacturing a semiconductor light emitting element comprises processes of: (a) forming a first semiconductor layer of a first conductivity type; (b) forming an emission layer on the first semiconductor layer; (c) forming a second semiconductor layer of a second conductivity type on the emission layer; and (d) forming first and second electrodes that are connected to the first and second semiconductor layers respectively. The process (b) further comprises sub-processes of: (b-1) forming a barrier layer consisting of a Zn<SB>1-y</SB>Mg<SB>y</SB>O layer; (b-2) forming a well layer consisting of a ZnS<SB>x</SB>O<SB>1-x</SB>layer; and (b-3) performing annealing after at least one of the sub-processes (b-1) and (b-2). In the chemical formulas, x and y are equal to or greater than 0, and are such values that make the bandgap of the ZnS<SB>x</SB>O<SB>1-x</SB>layer smaller than that of the Zn<SB>1-y</SB>Mg<SB>y</SB>O layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
