Method of manufacturing a germanosilicide and a semiconductor device having the germanosilicide

摘要

Example embodiments relate to a method of manufacturing a germanosilicide and a semiconductor device having the germanosilicide. A method according to example embodiments may include providing a substrate having at least a portion formed of silicon germanium. A metal layer may be formed on the silicon germanium. A thermal process may be performed on the substrate at a relatively high pressure to form the germanosilicide.