发明名称 FLUOROPHOR THIN FILM AND METHOD OF FORMING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a fluorophor thin film favorable for use in an inorganic EL and a PDP, high in color purity and giving high luminance, and to provide a method of forming the same in high speed. SOLUTION: The fluorophor thin film is formed from a sulfide represented by the following compositional formula: Zn<SB>x0</SB>Ba<SB>x1</SB>Al<SB>x2</SB>S<SB>x3</SB>Eu<SB>x4</SB>(wherein, x0 to x4 satisfy the expressions (1) to (5)) constituted of zinc, barium, aluminum, sulfur and europium, wherein the compound texture of the thin film is characterized by comprising a compound phase represented by compositional formula: BaAl<SB>2</SB>S<SB>4</SB>:Eu. The expressions are as follows: (1) 0.005≤x0≤0.3, (2) x1+x4=1, (3) 2.01≤x2≤3.0, (4) 4.0<x3≤4.3, and (5) 0.03≤x4≤0.10. The fluorophor thin film is produced by the following process: A BaAlEu alloy layer is additionally subjected to sputtering film formation on a film-formed zinc sulfide layer, followed by annealing the resultant film-formed layers while keeping the layers at 500-700°C in a hydrogen sulfide atmosphere. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008156495(A) 申请公布日期 2008.07.10
申请号 JP20060347652 申请日期 2006.12.25
申请人 SUMITOMO METAL MINING CO LTD 发明人 TAKATSUKA YUJI
分类号 C09K11/64;C09K11/08 主分类号 C09K11/64
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