MASK FOR FORMING POLYSILICON AND A METHOD FOR FABRICATING THIN FILM TRANSISTOR USING THE SAME

摘要

A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask <img id="CUSTOM-CHARACTER-00001" he="7.53mm" wi="135.93mm" file="US20080166892A1-20080710-P00999.TIF" img-content="character" img-format="tif"/>