| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the resolution of a resist pattern in a multilayer resist process. <P>SOLUTION: An underlay film 102 is formed on a substrate 101 and heated, the underlay film comprising a pattern forming material containing a polymer prepared by polymerization of cycloolefin having a crosslinking group, and a heat-acid generator generating an acid by heat. Then intermediate film 103 containing silicon is formed on the underlay film 102, and an upper film 104 comprising a resist is formed thereon. The upper film 104 is exposed to an exposure light 106, and the exposed upper film 104 is developed to form a first pattern 104a from the upper film 104. The intermediate film 103 is etched, by using the first pattern 104a a mask to form a second pattern 103a from the intermediate film 103. Furthermore, the first pattern 104a and the second pattern 103a are used as a mask to form a third pattern 102a, that is superior in the profile is formed from the lower film 102. <P>COPYRIGHT: (C)2008,JPO&INPIT |
