发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that can emit light in the visible wavelength band having the wavelength longer than that of the blue light beam using a nitride compound semiconductor as an active layer. SOLUTION: The semiconductor light-emitting element includes an oxide zinc single crystal substrate 1 having the surface c or the surface a little sloped from the surface c as the principal surface, a convex part 1a formed on the oxide zinc single crystal substrate 1 including the surface c or the surface a little sloped from the surface c as the upper surface and also including the surface (11_22) in both sides of the upper surface, a first clad layer 3 grown at least on the front surface of the convex part 1a, an active layer 5 formed on the first clad layer 3, a second clad layer 7 formed on the active layer 5, a contact layer 8 formed on the second clad layer 7, first electrodes 12a, 12b electrically connected to the contact layer 8 formed on the surface (11_22), and a second electrode 9 formed on the lower surface of the oxide zinc single crystal substrate 1. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008159635(A) 申请公布日期 2008.07.10
申请号 JP20060343477 申请日期 2006.12.20
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 SHINAGAWA TATSUSHI;ISHII HIROTATSU
分类号 H01S5/323 主分类号 H01S5/323
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