| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a two-layer resist film from which a resist pattern capable of controlling its undercut shape so that undercuts do not connect with each other at the bottoms between patterns is obtained on a substrate surface by a single exposure and development, even in the case of a fine pattern with lines/spaces of not over 10 μm/10 μm, and a burr-free film forming layer can easily be formed, and to provide a pattern forming method to form the same, with respect to a method for forming a vapor-deposited and/or sputtered film by lift-off. <P>SOLUTION: A specific positive radiation-sensitive resin composition 1 and a specific positive radiation-sensitive resin composition 2 are applied to form a two-layer laminated film; a fine pattern having a cross section of an undercut shape is formed in a resist comprising the two-layer laminated film by a single exposure, an organic or inorganic thin film is formed via the fine pattern as a mask material by vapor deposition and/or sputtering, and lift-off is carried out, to form a pattern of a desired shape. <P>COPYRIGHT: (C)2008,JPO&INPIT |
