| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reticle to be used for reduction projection exposure of a wafer, wherein a pattern excellent in dimensional uniformity can be formed. <P>SOLUTION: The distribution of variance in a pattern dimension in an exposure field of an exposure device is preliminarily measured, and a pattern dimension is corrected so as to compensate the variance in the pattern dimension upon manufacturing a reticle. By using the corrected reticle for exposure, variance in the pattern dimension in the exposure field can be suppressed to the minimum, which improves the yield of semiconductor chips. <P>COPYRIGHT: (C)2008,JPO&INPIT |
