发明名称 COCRPT-BASED SPUTTERING TARGET AND METHOD FOR PRODUCTION THEREOF
摘要 <p>Disclosed is a CoCrPt-based sputtering target which is reduced in the size and the quantity of a high-chromium particle having a high chromium atom content unevenly distributed in the sputtering target and therefore has increased target homogeneity, which is reduced in the formation of nodule or arcing, and which has a desired chemical composition. The CoCrPt-based sputtering target comprises cobalt, chromium, a ceramic material and platinum, wherein a high-chromium particle which has a high chromium atom content and is unevenly distributed in the sputtering target has a longest diameter of 40 µm or less.</p>
申请公布号 WO2008081841(A1) 申请公布日期 2008.07.10
申请号 WO2007JP75031 申请日期 2007.12.26
申请人 MITSUI MINING & SMELTING CO., LTD.;KATO, KAZUTERU;HAYASHI, NOBUKAZU 发明人 KATO, KAZUTERU;HAYASHI, NOBUKAZU
分类号 C23C14/34;C22C19/00;G11B5/851 主分类号 C23C14/34
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