发明名称 |
COCRPT-BASED SPUTTERING TARGET AND METHOD FOR PRODUCTION THEREOF |
摘要 |
<p>Disclosed is a CoCrPt-based sputtering target which is reduced in the size and the quantity of a high-chromium particle having a high chromium atom content unevenly distributed in the sputtering target and therefore has increased target homogeneity, which is reduced in the formation of nodule or arcing, and which has a desired chemical composition. The CoCrPt-based sputtering target comprises cobalt, chromium, a ceramic material and platinum, wherein a high-chromium particle which has a high chromium atom content and is unevenly distributed in the sputtering target has a longest diameter of 40 µm or less.</p> |
申请公布号 |
WO2008081841(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
WO2007JP75031 |
申请日期 |
2007.12.26 |
申请人 |
MITSUI MINING & SMELTING CO., LTD.;KATO, KAZUTERU;HAYASHI, NOBUKAZU |
发明人 |
KATO, KAZUTERU;HAYASHI, NOBUKAZU |
分类号 |
C23C14/34;C22C19/00;G11B5/851 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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