| 摘要 |
FIELD: technological process. ^ SUBSTANCE: invention is related to procedure of preparation of single crystals of semi-conductor compounds and their solid solutions, which are used in semi-conductor industry. Device for preparation of single crystals consists of working chamber, coupling with clamps, furnace with loop-type heater, crystallisation vessel with heat removing rod, heated vessels for evaporation of volatile components with pipelines for steam supply in solution-melt, tank for make-up, which is installed in crystallisation vessel, connected with working chamber by means of capillary and divided into N reservoirs, which have nozzles in the bottom with lateral openings and double-ended valves, wall along perimeter that forms working cavity connected with pipeline to vessels for evaporation of volatile components and where double-layer spiral electric heater is installed with current inputs that pass through tubes, external permanent magnet. Lower part of device working chamber consists of mechanism for displacement of cylindrical vessel with scale and liquid, in which hollow float is immersed, which is soldered by means of tube with hollow cylindrical rod that is fixed to crystallisation vessel. Technical result of invention consists in increase of device safe operation by means of sensitivity increase K=h1/h times, where h1 - liquid level shift, which corresponds to shift of rod - h, which allows with less forces to determine the moment of loaded substances thrust to double-layer spiral electric heater and to provide its safety, and also in the possibility of rod more accurate movement. ^ EFFECT: increase of device operation safety by means of sensitivity increase. ^ 2 cl, 3 dwg |
