发明名称 |
METHOD OF FORMING SOURCE AND DRAIN OF FIELD-EFFECT-TRANSISTOR AND STRUCTURE THEREOF |
摘要 |
Embodiments of the invention provide a method of forming a field-effect-transistor (FET). The method includes implanting one or more n-type dopants to create one or more implanted regions with at least a portion of the implanted regions being designated as regions for forming source and drain extensions of the FET; activating the implanted regions; etching with a chlorine based etchant to create openings in the implanted regions, and forming the source and drain extensions by exptaxially growing embedded silicon germanium in the openings. Structure of a semiconductor field-effect-transistor made thereof is also provided.
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申请公布号 |
US2008166847(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
US20070763561 |
申请日期 |
2007.06.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
UTOMO HENRY K.;MISHRA SHAILENDRA;TEO LEE WEE;LEE JAE GON;TAN SHYUE SENG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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