发明名称 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 A memory cell array includes memory cells disposed in a matrix. A plurality of word-lines are arranged in the memory cell array to select a memory cell in a row direction. A read bit-line pair is arranged in a direction perpendicular to the word-line to read data from the memory cell. In addition, a write bit-line is arranged in a direction perpendicular to the word-line to write data to the memory cell. The read bit-line pair includes a true and a complementary read bit-line. One of the true and complementary read bit-lines is connected to the memory cell connected to an even-numbered word-line. The other one is connected to the memory cell connected to an odd-numbered word-line.
申请公布号 US2008165564(A1) 申请公布日期 2008.07.10
申请号 US20080968893 申请日期 2008.01.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAMEKAWA TOSHIMASA
分类号 G11C17/18;G11C17/16 主分类号 G11C17/18
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