| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a cleaning method where defect in short-circuiting between a gate electrode and a contact plug is suppressed by removing micro protrusions on a silicide and a method for manufacturing a semiconductor device. <P>SOLUTION: The method for manufacturing a semiconductor device includes a step of forming a Ti film on diffusion layers 6, 7 on the gate electrode 3 and in source/drain regions, a silicidation step of forming Ti silicide films 9a to 9c on the diffusion layer on the gate electrode and in the source/drain regions by performing thermal treatment on the Ti films, a step that is a cleaning step of removing Ti films not silicided and left in the silicidation step and is a step of performing cleaning while applying supersonic wave to cleaning fluid containing aqueous ammonia and hydrogen peroxide solution, a step of forming an interlayer insulating film 10 on a Ti silicide film, and a step of forming a first connection hole and a second connection hole by etching the interlayer insulating film. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
