| 摘要 |
A method of programming a group of memory cells in a semiconductor memory device selecting a group of memory cells for programming, and enabling a first subgroup of memory cells from the group of memory cells for programming. After enabling the first subgroup, the programming method waits a first predetermined time period and after the first predetermined time period, enables a second subgroup of memory cells from the group of memory cells for programming while continuing to enable the first subgroup for programming.
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