| 摘要 |
#CMT# #/CMT# The method involves forming an adhesion layer made of nitride on a surface (40) of a substrate (30) made of III-V type material. A bonding layer made of oxide is formed on the adhesion layer. The substrate, adhesion layer and bonding layer are assembled on another substrate. The substrate (30) is thinned by breaking at the level of buried fragile area created by a fragilization of the substrate (30) to form a thin film. #CMT# : #/CMT# An independent claim is also included for a material structure comprising a substrate. #CMT#USE : #/CMT# Method for transferring a thin film using a smart cut(RTM: bonding and thin layer transfer technique) technique in high power electronics, radio frequency or microwave field, and on a gallium nitride on insulator structure for manifesting electronic or optoelectronic component such as LED and Laser diode. #CMT#ADVANTAGE : #/CMT# The adhesion layer permits improving the attraction with the substrate made of III-V type material with respect to the bonding layer, thus assuring better adhesion between the substrate and the oxide of the bonding layer. The method ensures better temperature stability to the oxide of the bonding layer. The method increases the thickness of the bonding layer, so as to guaranty sufficient planarization for obtaining better molecular sticking quality without penalizing the implantation depth or thickness of the thin film. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic view illustrating a step of a thin film transferring method made of III-V type material. 30 : Substrate 40 : Surface #CMT#CERAMICS AND GLASS : #/CMT# The later substrate is made of material such as alumina, spinel e.g. magnesium aluminum spinel, glass or aluminum nitride. #CMT#INORGANIC CHEMISTRY : #/CMT# The adhesion layer formed on the substrate made of material such as Gallium nitride, aluminum nitride, aluminum gallium nitride, indium gallium nitride, aluminum indium gallium nitride, gallium arsenide, indium gallium arsenide, Indium gallium phosphide, aluminum gallium arsenide, indium phosphide, gallium arsenide nitride, boron gallium nitride, or aluminum boron nitride. The another substrate is made of material such as aluminum oxide, monocrystalline silicon, monocrystalline silicon carbide, silicon, silicon carbide or monocrystalline sapphire. The adhesion layer is made of silicon nitride or aluminum nitride. The bonding layer is made of silicon oxide. The thin film is made of III-N type material such as indium gallium nitride or gallium nitride. |
