SEMICONDUCTOR DEVICE, AND METHOD OF FORMING CAPACITY THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a capacity of a semiconductor device by which the semiconductor device including a capacity element can be manufactured inexpensively. SOLUTION: This method is used to form a capacity of a semiconductor wherein at least a transistor and a capacity element are arranged on a GaAs semiconductor substrate 3. It includes: a step 1 to make at least two holes with different depths, a groove 6 and a via hole 7 in the GaAs substrate 3 at the same time; a step 2 to form a capacity structure as an electrode of the capacity element at the same time on the GaAs semiconductor substrate 3 and inside the groove 6 and the via hole 7; and a step 3 to polish the rear surface of the GaAs semiconductor substrate 3 after the step 2. COPYRIGHT: (C)2009,JPO&INPIT