| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, electro-optical device, electronic equipment and the like capable of reducing EMI noise. <P>SOLUTION: The semiconductor device 90 includes a source circuit 100 and a control circuit 300. The source circuit 100 includes a plurality of operational amplifiers OP1-OP25, a plurality of transmission gates TG1-TG25 each of which has one terminal connected to a corresponding source line, and buffer circuits BF1A-BF12A each outputting a switch control signal. When the number of transmission gates to be turned on/off by the buffer circuits is represented by (n), a gate width and a gate length of an MOSFET constituting each transmission gate are represented by Wb and Lb, respectively, a gate width and a gate length of an MOSFET constituting each buffer circuit are represented by Wa and La, respectively and K denotes a constant, the relationship of n×Wb×Lb≥K×(Wa/La) is established. <P>COPYRIGHT: (C)2009,JPO&INPIT |
