| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which exactly remove only by a predetermined cutting allowance from a silicon wafer in a short time. SOLUTION: The silicon wafer etching method includes a removing process which anneals the silicon wafer in an atmosphere of hydrogen, argon, etc., and removes the surface layer of the silicon wafer by the predetermined allowance almost evenly. In the removing process, the surface layer of the silicon wafer (10) is removed by spin-etching using an etching liquid containing at least one of a nitric acid (HNO<SB>3</SB>), a hydrofluoric acid (HF), and a sulfuric (H<SB>2</SB>SO<SB>4</SB>) acid, the rotation speed of the silicon wafer (10) and the supply amount of the etching liquid (25) are adjusted, a rinse liquid (27) is supplied on the surface of the silicon wafer (10) exposed due to the etching just after stopping the supply of the etching liquid, and the etching liquid is neutralized and then rinsed out to stop the progress of etching immediately. COPYRIGHT: (C)2009,JPO&INPIT
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