| 摘要 |
<p>1,181,126. Semi-conductor devices. R.C.A. CORPORATION. 26 June, 1967 [7 July, 1966], No. 29441/67. Heading H1K. A protective passivating layer 30 provided over a first insulating layer 20 on the surface of a semi-conductor device so as to cover the electrodes 22, 24, 26, has distributed therethrough a substance which acts as a getter or passivator for contaminants at the device surface. Suitable materials for the layer 30 are silicon dioxide, monoxide, nitride, oxynitride, hydroxide or carbide, titanium carbide, germanium nitride, magnesium oxide, hydroxide or fluoride, or certain glasses. The passivating substance may be P, Cu, Ni, Ti, Mo, W, U, Al, As, Ge, &c. Preferred combinations are P in SiO 2 or Si 3 N 4 , vapour deposited or sputtered to form a relatively soft layer 30 which is then heated to "activate" the P. This layer 30 may be readily penetrated by means for bonding leads to the electrodes 22, 24, 26. Suitable bonding means involve ultrasonic, thermocompression or welding techniques. Optionally a second, undoped, insulating layer 32 may be provided on the layer 30. The device shown is a Si transistor having a SiO 2 coating 20 and electrodes of Al, Cu, Au, Cr or Ag. Numerous devices may be formed in a single wafer, which is then diced.</p> |
