发明名称 Low-voltage reading device in particular for MRAM memory
摘要 The invention relates to a circuit for reading a cell of a bit line, including first and second transistors for controlling the bit line and a reference line, respectively, a reference transistor connected to the second control transistor and a write transistor of the reference current connected to the first control transistor, for comparing the current of the bit line and the reference current, characterized in that a first intermediate transistor is connected to the write transistor parallel to the first control transistor, and in that a second intermediate transistor is connected between the gate and the drain of the reference transistor parallel to the second control transistor, and polarization transistors are connected in series, respectively, to the intermediate transistors so as to superimpose a current over the reference current.
申请公布号 US7466595(B2) 申请公布日期 2008.12.16
申请号 US20080033795 申请日期 2008.02.19
申请人 发明人
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
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