发明名称 Method and apparatus for processing organosiloxane film
摘要 A method for processing an organosiloxane film includes loading a target substrate (W) with a coating film formed thereon into a reaction chamber (2), and performing a heat process on the target substrate (W) within the reaction chamber (2) to bake the coating film. The coating film contains a polysiloxane base solution having an organic functional group. The heat process includes a temperature setting step of setting an interior of the reaction chamber (2) at a process temperature by heating, and a supplying step of supplying a baking gas into the reaction chamber (2) set at the process temperature, while activating the baking gas by a gas activation section (14) disposed outside the reaction chamber (2).
申请公布号 US7465682(B2) 申请公布日期 2008.12.16
申请号 US20050553191 申请日期 2005.10.13
申请人 TOKYO ELECTRON LIMITED 发明人 HISHIYA SHINGO
分类号 H01L21/31;B05D3/04;H01L21/312;H01L21/314;H01L21/316 主分类号 H01L21/31
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