Method of forming anisotropic heat spreading apparatus for semiconductor devices

摘要

A method for forming a heat spreading apparatus for semiconductor devices is disclosed. The method includes extruding a frame material to form multiple individual cells including fillable openings within the frame material; filling a first group of the individual cells with one or more high thermal conductivity materials; filling at least a second group of the individual cells with one or more materials of lower thermal conductivity than in the first group of the individual cells; and implementing a reflowing process following filling the multiple individual cells so as to infiltrate the materials within the individual cells, wherein defined walls of the frame material remain following the reflowing.