发明名称 Method for manufacturing transfer mask substrate, transfer mask substrate, and transfer mask
摘要 To reduce a stress change generated in the production processes of a transfer mask to improve a position accuracy of a mask pattern. A production method of a transfer mask characterized by further including, in the production processes of the transfer mask, a step of forming on said thin film layer a stress control layer that cancels a stress change of the thin film layer generated in the production processes of the mask, prior to formation of said resist layer, and a step of carrying out etching using said resist pattern as an etching mask.
申请公布号 US7465523(B2) 申请公布日期 2008.12.16
申请号 US20050506116 申请日期 2005.01.03
申请人 HOYA CORPORATION 发明人 AMEMIYA ISAO
分类号 G03F1/16;G03F9/00;B81C99/00;G03C5/00;G03F1/14;G03F1/20;H01L21/027 主分类号 G03F1/16
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