发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY HAVING THE SAME
摘要 A thin film transistor substrate and a manufacturing method thereof are provided to reduce the signal delay by reducing electrostatic capacity between data line and a light shield layer. A plurality of gate lines(121) are is extended along the substrate. A plurality of light shield layers(124) are formed on the direction which intersects with the gate line. A low dielectric insulator layer(133) is formed in upper part the light shield layer. A plurality of data lines(141) are formed in upper part the low dielectric insulator layer, and overlapped with the light shield layer. A pixel electrode(151) is formed on the domain in which the gate line and data line are crossed.
申请公布号 KR20080108754(A) 申请公布日期 2008.12.16
申请号 KR20070056722 申请日期 2007.06.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HYUK JIN;KIM, KYUNG WOOK
分类号 G02F1/136;G02F1/1335 主分类号 G02F1/136
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