发明名称 |
METHOD OF MAKING HCD GAS HARMLESS AND APPARATUS THEREFOR |
摘要 |
A discharge gas (L) containing hexachlorodisilicon is introduced into a reaction treatment region (K) without moistening the gas. An oxygenous gas (G) containing a slight amount of water is supplied to the reaction treatment region (K) which is kept at a decomposition temperature of hexachlorodisilicon to thereby decompose the hexachlorodisilicon into hydrochloric acid, silicon dioxide, and water. Thus, the treatment of the discharge gas containing hexachlorodisilicon is safely conducted without generating silicoxalic acid or chlorine. ® KIPO & WIPO 2009 |
申请公布号 |
KR20080108992(A) |
申请公布日期 |
2008.12.16 |
申请号 |
KR20087022793 |
申请日期 |
2007.02.06 |
申请人 |
KANKEN TECHNO CO., LTD.;TOAGOSEI CO., LTD. |
发明人 |
IMAMURA HIROSHI;TAKEUCHI HIROAKI;ISHIKAWA KOJI;SUZUKI HIROSHI;MORIYA AKIRA;HARADA KATSUYOSHI |
分类号 |
B01D53/68;B01D53/77;C23C16/44;F23G7/06 |
主分类号 |
B01D53/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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