发明名称 |
Patterned ferroelectric thin films for microwave devices |
摘要 |
A process, for patterning a thin film that is highly resistant to conventional etching processes and that is to be deposited at a high substrate temperature, is disclosed. The process uses a liftoff method wherein a refractory material has been substituted for the conventional organic resin. The method is particularly useful for the fabrication of tunable microwave devices and ferroelectric memory elements.
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申请公布号 |
US7465354(B2) |
申请公布日期 |
2008.12.16 |
申请号 |
US20050074417 |
申请日期 |
2005.03.08 |
申请人 |
NATIONAL UNIVERSITY OF SINGAPORE |
发明人 |
ONG CHONG KIM;TAN CHIN YAW |
分类号 |
C30B25/04 |
主分类号 |
C30B25/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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