发明名称 Plasma immersion ion implantation process
摘要 A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.
申请公布号 US7465478(B2) 申请公布日期 2008.12.16
申请号 US20050046660 申请日期 2005.01.28
申请人 APPLIED MATERIALS, INC. 发明人 COLLINS KENNETH S.;HANAWA HIROJI;RAMASWAMY KARTIK;NGUYEN ANDREW;AL-BAYATI AMIR;GALLO BIAGIO
分类号 C23C14/48;B05D3/06;H01J37/32;H05H1/02;H05H1/24;H05H1/46 主分类号 C23C14/48
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