发明名称 SRAM design with separated VSS
摘要 An array of static random access memory (SRAM) cells arranged in a plurality of rows and a plurality of columns includes a plurality of VSS lines connected to VSS nodes of the SRAM cells, with each VSS line connected to the SRAM cells in a same column. The plurality of VSS lines includes a first VSS line connected to a first column of the SRAM cells; and a second VSS line connected to a second column of the SRAM cells, wherein the first and the second VSS lines are disconnected from each other.
申请公布号 US7466581(B2) 申请公布日期 2008.12.16
申请号 US20070713280 申请日期 2007.03.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HUANG HUAI-YING;CHEN YEN-HUEI;WU JUI-JEN;WANG PING-WEI
分类号 G11C11/00 主分类号 G11C11/00
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