| 摘要 |
<p>A thin film transistor array for the X-ray detector is provided to secure the reliability of the X-ray detector by forming the auxiliary bias wiring independently from the bias wiring. A thin film transistor for the X-ray detector includes the gate wiring(20), the gate insulating layer(30), the active layer(40), the data line, the photo diode, the organic insulating film, the bias wiring(104). The gate wiring is formed on the insulating substrate. The gate wiring comprises the gate line(22) and the gate electrode(26) connected to the gate line. The gate insulating layer covers the gate wiring. The active layer is formed in order to be overlapped with the gate electrode on the gate insulating layer. The data line comprises the data line and the drain electrode(66). The data line is formed on the gate insulating layer. The photo diode comprises the bottom electrode(68), and the upper electrode(80). The organic insulating film covers the data line and the photo diode. The bias wiring is formed on the organic insulating film.</p> |
