METHOD FOR MANUFACTURING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LAMP

摘要

Provided are a method for manufacturing a gallium nitride compound semiconductor light emitting element having a low drive voltage (Vf) and a high light extraction efficiency, a gallium nitride compound semiconductor light emitting element and a lamp. The method is provided for manufacturing the gallium nitride compound semiconductor light emitting element wherein a light transmitting conductive oxide film (15) including a dopant is stacked on a p-type semiconductor layer (14) of the gallium nitride compound semiconductor element (1). The method has a laser annealing step wherein the light transmitting conductive oxide film (15) is annealed by using laser, after stacking the light transmitting conductive oxide film (15). ® KIPO & WIPO 2009