PLASMA DOPING APPARATUS AND PLASMA DOPING METHOD

摘要

Disclosed is a plasma doping apparatus for introducing an impurity element into the surface of an object (W) to be treated by using a plasma. The plasma doping apparatus comprises a high-frequency power supply (72) for applying a high-frequency power for bias to a stage (34) provided within a process chamber (32), a gas supply unit (96) for supplying a dopant gas containing the impurity element into the process chamber (32), and a plasma-generating unit (78) for producing a plasma within the process chamber (32). This plasma doping apparatus enable to make a portion doped with the impurity element very thin, and to quickly introduce the impurity element at a high concentration.