摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element that employs a mechanism for self-organized growth, can be actualized without using vapor deposition or ultrahigh vacuum, and is industrially simple and has high practicality and a manufacturing method thereof, and an ErSi<SB>2</SB>nano-wire and a manufacturing method thereof. <P>SOLUTION: The manufacturing method of the light emitting element includes a step (S1) of washing an Si substrate, a step (S2) of sticking an erbium solution on the Si substrate, and steps (S3, S4) of heat-treating the Si substrate the erbium solution stucked thereto under a vacuum, and is characterized by forming a light emission layer of an erbium compound on the Si substrate. Further, the manufacturing method of the nano-wire includes a step (S1) of washing an Si substrate, a step (S2) of sticking an erbium solution on the Si substrate, and steps (S3, S4) of heat-treating the Si substrate with the erbium solution stuck thereto under a vacuum, wherein the nano-wire is formed of ErSi<SB>2</SB>crystal on the Si substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT |