摘要 |
The present disclosure relates to photodetectors with high efficiency of light detection, and may be used in a wide field of applications, which employ the detection of very weak and fast optical signals, such as industrial and medical tomography, life science, nuclear, particle, and/or astroparticle physics etc. A highly efficient CMOS-technology compatible Silicon Photoelectric Multiplier may comprise a substrate and a buried layer applied within the substrate. The multiplier may comprise cells with silicon strip-like quenching resistors, made by CMOS-technology, located on top of the substrate and under an insulating layer for respective cells, and separating elements may be disposed between the cells. |
申请人 |
MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. |
发明人 |
TESHIMA, MASAHIRO;MIRZOYAN, RAZMIK;DOLGOSHEIN, BORIS, ANATOLIEVICH;PLESHKO, ANATOLY |