发明名称 HIGHLY EFFICIENT CMOS TECHNOLOGY COMPATIBLE SILICON PHOTOELECTRIC MULTIPLIER
摘要 The present disclosure relates to photodetectors with high efficiency of light detection, and may be used in a wide field of applications, which employ the detection of very weak and fast optical signals, such as industrial and medical tomography, life science, nuclear, particle, and/or astroparticle physics etc. A highly efficient CMOS-technology compatible Silicon Photoelectric Multiplier may comprise a substrate and a buried layer applied within the substrate. The multiplier may comprise cells with silicon strip-like quenching resistors, made by CMOS-technology, located on top of the substrate and under an insulating layer for respective cells, and separating elements may be disposed between the cells.
申请公布号 EP2462630(B1) 申请公布日期 2016.03.30
申请号 EP20090777615 申请日期 2009.08.03
申请人 MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. 发明人 TESHIMA, MASAHIRO;MIRZOYAN, RAZMIK;DOLGOSHEIN, BORIS, ANATOLIEVICH;PLESHKO, ANATOLY
分类号 H01L31/107;H01L27/144 主分类号 H01L31/107
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