| 摘要 |
FIELD: automatics, computer engineering, magnetic thin-film memorizing and switchable elements. SUBSTANCE: central conductor arranged above strip is so applied relative to it that magnetic field induced by current flowing through it coincides with axis of light magnetization of thin-film magnetoresistive layers. Thin-film magnetoresistive layers have different values of field of magnetic anisotropy and relation of bigger field of magnetic anisotropy to smaller one amounts to not less than four. EFFECT: expanded functional capabilities. 4 dwg |
