| 摘要 |
<p>The current invention presents a method for thinning wafers. The method uses a two-step process, whereby first the carrier wafer (2) is thinned and in a second step the device wafer (1 ) is thinned. The method is based on imprinting the combined thickness non-uniformities of carrier (2) and glue layer (3) essentially on the carrier (2), with a resulting low TTV of the wafer (100) after thinning.</p> |
