Semiconductor device having double lightly doped drain and method for fabricating ths same,申请号KR20020038817-传众专利搜索

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发明名称	Semiconductor device having double lightly doped drain and method for fabricating ths same
摘要
申请公布号	KR100873814(B1)	申请公布日期	2008.12.11
申请号	KR20020038817	申请日期	2002.07.05
申请人		发明人
分类号	H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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