发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor light element that can keep track of a removable proturberance and can properly remove a proturberance protruding out of a surface of semiconductor layer. <P>SOLUTION: According to this manufacturing method for a semiconductor light element, the proturberance to be removed from a surface of a cap layer 5 by etching in a surface treatment step is limited to a proturberance A1 or C2 that is higher than a thickness of a resist layer 22 formed on the surface of the cap layer 5. Accordingly, since the height of a removable proturberance can be kept track of in advance based on the thickness of a resist layer 22 to be formed, neither too much nor too little etching will allow a proturberance to be properly removed that protrudes out of the surface of the cap layer 5. By repeating the steps S11 to S17 while changing the thickness of the resist layer 22, the proturberance can be completely removed while preventing unnecessary etching of a wafer. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008300650(A) 申请公布日期 2008.12.11
申请号 JP20070145495 申请日期 2007.05.31
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NOMAGUCHI TOSHIO
分类号 H01S5/02;H01L21/205;H01L21/306;H01L33/02 主分类号 H01S5/02
代理机构 代理人
主权项
地址