| 摘要 |
<p>Provided is a sputtering film forming apparatus by which a thin film having a uniform sheet resistance value can be formed. In the sputtering film forming apparatus, at least two magnetron sputtering mechanisms are arranged in a film forming chamber. An electrically insulated first cathode shield (62) is arranged in upstream in a substrate transfer direction (43) of a target shield (55) arranged on the magnetron sputtering mechanism, which is arranged in uppermost stream in the substrate transfer direction, of at least the two magnetron sputtering mechanisms.</p> |
