| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacuring a semiconductor light-emitting element with element characteristics further improved. <P>SOLUTION: The method for manufacturing a semiconductor laser 50 related to this invention includes a step of forming a GaN single crystal substrate 30 by slicing a GaN bulk crystal 20 with a c-face grown in parallel with an a-face orthogonal to the c-face. This type of substrate 30 is hardly affected by a crystal defect extending in parallel with the c-axis direction to make it possible to suppress a deterioration in element characteristic due to the crystal defect. Further, because the a-face is a nonpolar face, the a-face has a further improved light-emission efficiency and provides a long wavelength light in comparison with the c-face of polar face. Therefore, the element characteristic of the semiconductor laser 50 manufactured by the method for manufacturing the semiconductor laser 50 related to this invention is further improved. <P>COPYRIGHT: (C)2009,JPO&INPIT |
