发明名称 |
SEMICONDUCTOR DEVICE AND INSPECTION METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device and inspection method thereof, for efficiently detecting a failure of the semiconductor device by a measurement and management of various kinds of characteristic values of the semiconductor device. SOLUTION: The semiconductor device is provided with: a plurality of capacitors 40 which are arranged in a matrix form in an array area of a semiconductor substrate and have lower electrodes 34, dielectric films 36 and upper electrodes 38 respectively; wirings 76 connected to the lower electrodes 34 of a part of capacitors among the plurality of capacitors 40, which is formed on a part of areas in the array area; wirings 72a connected to the upper electrodes 38 of a part of capacitors; an electrode 78 for measurement electrically connected to the lower electrodes 34 of a part of capacitors through the wirings 76; and an electrode 74a for measurement electrically connected to the upper electrodes 38 of a part of capacitors through the wirings 72a. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2008299924(A) |
申请公布日期 |
2008.12.11 |
申请号 |
JP20070143042 |
申请日期 |
2007.05.30 |
申请人 |
FUJITSU MICROELECTRONICS LTD |
发明人 |
TAKAMATSU TOMOHIRO;TAKAI KAZUAKI;INOUE KENICHI |
分类号 |
G11C29/56;G11C11/22;H01L21/66;H01L21/8246;H01L27/105 |
主分类号 |
G11C29/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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