发明名称 HIGH-FREQUENCY LIMITER
摘要 Intended is to provide a high-frequency limiter for absorbing the dispersion of the characteristic parameters of a PIN diode thereby to attain desired limiting characteristics. Inside of a lower conductor portion (13) and an upper conductor portion (14), there is constituted an external semi-coaxial resonator of an outer pedestal (15) and a cavity (34). An internal semi-coaxial resonator is constituted of the inner wall of the outer pedestal (15), an inner pedestal (16) and a post (17). A PIN diode (18) is jointed between the post (17) and the inner pedestal (16). resonance windows (11 and 12) are formed between that resonator portion and a waveguide connected to the former. Moreover, a protrusion extent (x) of the outer pedestal (15) to the cavity (34) and an insertion extent (y) of the post (17) to the inside of the outer pedestal (15) are made indepenently adjustable. Between individual resonant portions (10 and 20), a partition wall (30) is interposed to form a joint hole (60), and the electromagnetic fields of the adjoining resonant portions (10 and 20) are jointed in an even mode thereby to give low-pass characteristics to the joint hole (60). As a result, the occurrence of the unnecessary resonance mode is suppressed to widen the band of the breaking characteristics.
申请公布号 WO2008149893(A1) 申请公布日期 2008.12.11
申请号 WO2008JP60277 申请日期 2008.06.04
申请人 FURUNO ELECTRIC CO., LTD.;KOREYASU, MISA;TAKASHIMA, TETSUYA 发明人 KOREYASU, MISA;TAKASHIMA, TETSUYA
分类号 H03G11/00;H01P1/15;H01P5/103;H01P7/04;H03G11/02 主分类号 H03G11/00
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