发明名称 REAR SURFACE IRRADIATION TYPE IMAGING ELEMENT, AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a rear surface irradiation type imaging element capable of improving element characteristics, improving yield and reducing color mixture. <P>SOLUTION: The rear surface irradiation type imaging element irradiates the rear surface of a silicon substrate 1 with a light, and reads charges generated in the silicon substrate 1 through the front surface of the silicon substrate 1 in response to the light to image an image. The imaging element is provided with rear surface element configuring layers (8, 9, 10) configuring rear surface elements formed on the rear surface of the silicon substrate 1, front surface element configuring layers (2, 3, 4, 5) configuring front surface elements formed on the front surface of the silicon substrate 1, a supporting substrate 6 formed above the front surface element configuring layers, spacers S used for uniforming a distance between the silicon substrate 1 and the supporting substrate 6 and having one end contacting the front surface element configuring layer (5) and the other end contacting the supporting substrate 6, and an adhesive member 7 filled in the space between the front surface element configuring layer and the supporting substrate 6 which is formed by the spacers S. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008300551(A) 申请公布日期 2008.12.11
申请号 JP20070143804 申请日期 2007.05.30
申请人 FUJIFILM CORP 发明人 UIE SHINJI
分类号 H01L27/148;H01L27/146 主分类号 H01L27/148
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