| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing a carbon-doped silicon single crystal, by which carbon can be easily doped into the silicon crystal at a low cost in the process of pulling up a silicon single crystal by Czochralski method, and further the carbon concentration in the silicon single crystal can be accurately controlled. SOLUTION: A polycrystalline silicon, which is a precursor of a silicon single crystal, and a carbon doping agent are filled in a quartz crucible. For the above carbon doping agent, a highly soluble extrusion molding material or molding material having excellent reactivity with silicon is used. The injection can be performed, for example, by as following: the desired amount of carbon particles 15, prepared by the purification treatment of the molding material crushed into a particle diameter of 3-10 mm during melting of the polycrystalline silicon or after melting, can be injected from an injection member 13 to inside the crucible. COPYRIGHT: (C)2009,JPO&INPIT
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