| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching gas flow controller of a local dry etching device according to capable of facilitating the setting of optimum overhang amounts and clearance amounts corresponding to roll-off shapes different at each semiconductor wafer, capable of controlling an etching amount according to the shape of a semiconductor wafer outer peripheral part, and achieving improvement in the flatness of a semiconductor wafer outer peripheral edge such as roll-off and an SFQR. SOLUTION: The etching gas flow controller is equipped with: a plate type mask body M which can cut a portion of a flow of etching gas jetted from a nozzle of the local dry etching device toward a semiconductor wafer W at the edge of the mask body M on the forward side of the gas flow, and is formed of a material having resistance against exposure to the gas; and a sending device which moves the plate type mask body M as local etching progresses. The sending device can adjust a position of the edge of the plate type mask body M according to an edge roll-off shape of the semiconductor wafer, so that it need not be replaced at each edge roll-off shape. COPYRIGHT: (C)2009,JPO&INPIT
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